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Samsung M4 70T2864EH3-CE6 1GB
Samsung M4 70T5663QZ3-CE6 2GB
Compare
Samsung M4 70T2864EH3-CE6 1GB vs Samsung M4 70T5663QZ3-CE6 2GB
Overall score
Samsung M4 70T2864EH3-CE6 1GB
Overall score
Samsung M4 70T5663QZ3-CE6 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864EH3-CE6 1GB
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Below the latency in the PassMark tests, ns
67
68
Around 1% lower latency
Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
2
Average value in the tests
Faster write speed, GB/s
1,702.6
1,122.9
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M4 70T2864EH3-CE6 1GB
Samsung M4 70T5663QZ3-CE6 2GB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
67
68
Read speed, GB/s
2,058.7
3,886.6
Write speed, GB/s
1,122.9
1,702.6
Memory bandwidth, mbps
5300
5300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
5-5-5-15 / 667 MHz
5-5-5-15 / 667 MHz
Ranking PassMark (The more the better)
317
654
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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