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Samsung M4 70T2864QZ3-CE6 1GB
Apacer Technology GD2.1140CH.001 4GB

Samsung M4 70T2864QZ3-CE6 1GB vs Apacer Technology GD2.1140CH.001 4GB

总分
star star star star star
Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分
star star star star star
Apacer Technology GD2.1140CH.001 4GB

Apacer Technology GD2.1140CH.001 4GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
Apacer Technology GD2.1140CH.001 4GB 需要考虑的原因
Apacer Technology GD2.1140CH.001 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 65
    左右 -5% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 1,574.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CE6 1GB
Apacer Technology GD2.1140CH.001 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 62
  • 读取速度，GB/s
    3,858.9 left arrow 17.2
  • 写入速度，GB/s
    1,574.4 left arrow 9.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    607 left arrow 2107

Samsung M4 70T2864QZ3-CE6 1GB RAM的比较

Samsung M4 70T2864QZ3-CF7 1GB
Kingston KVR800D2S6/4G 4GB

Apacer Technology GD2.1140CH.001 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864QZ3-CE6 1GB
Apacer Technology GD2.1140CH.001 4GB
Apacer Technology GD2.1140CH.001 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
SK Hynix HMAA2GU6AJR8N-XN 16GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-2133C15-16GRS 16GB
G Skill Intl F4-2133C15-16GRS 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMU16GX4M2A2400C16 8GB
Corsair CMU16GX4M2A2400C16 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
EVGA 8GX-D4-2800-MR 8GB
EVGA 8GX-D4-2800-MR 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CM4X32GE2666C18S2 32GB
Corsair CM4X32GE2666C18S2 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C15-8GRR 8GB
G Skill Intl F4-2400C15-8GRR 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
AMD R7S44G2606U1S 4GB
AMD R7S44G2606U1S 4GB
内存RAM