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Samsung M4 70T2864QZ3-CE6 1GB
Kingston 99U5665-004.A00G 4GB

Samsung M4 70T2864QZ3-CE6 1GB vs Kingston 99U5665-004.A00G 4GB

总分
star star star star star
Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分
star star star star star
Kingston 99U5665-004.A00G 4GB

Kingston 99U5665-004.A00G 4GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    65 left arrow 66
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 16.4
    测试中的平均数值
Kingston 99U5665-004.A00G 4GB 需要考虑的原因
Kingston 99U5665-004.A00G 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.8 left arrow 1,574.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CE6 1GB
Kingston 99U5665-004.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 66
  • 读取速度，GB/s
    3,858.9 left arrow 16.4
  • 写入速度，GB/s
    1,574.4 left arrow 6.8
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    607 left arrow 1737

Samsung M4 70T2864QZ3-CE6 1GB RAM的比较

Samsung M4 70T2864QZ3-CF7 1GB
Kingston KVR800D2S6/4G 4GB

Kingston 99U5665-004.A00G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
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内存RAM
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内存RAM
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Kingston 9905663-007.A00G 16GB
内存RAM
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SK Hynix HMT325S6CFR8C-PB 2GB
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Kingston 9905701-018.A00G 16GB
内存RAM
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Samsung M471B5773DH0-CH9 2GB
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内存RAM
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Kingston 99U5584-004.A00LF 4GB
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内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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