Samsung M4 70T2864QZ3-CE6 1GB vs Samsung M378A4G43MB1-CTD 32GB

总分

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 15.4

测试中的平均数值

Samsung M378A4G43MB1-CTD 32GB

需要考虑的原因
Samsung M378A4G43MB1-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

38 65

左右 -71% 更低的延时
更快的写入速度，GB/s

12.6 1,574.4

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M378A4G43MB1-CTD 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 38
读取速度，GB/s

3,858.9 15.4
写入速度，GB/s

1,574.4 12.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

607 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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ASint Technology SSZ302G08-GGNHC 2GB

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Samsung M471B5273DH0-CH9 4GB

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Corsair CMT32GX4M2C3000C15 16GB

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Kingston 99U5469-045.A00LF 4GB

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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

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G Skill Intl F4-3600C19-16GSXF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Corsair CMY8GX3M2A2666C10 4GB

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Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

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Samsung M393A2G40DBD-CP1???? 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB