Samsung M4 70T2864QZ3-CF7 1GB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

A-DATA Technology AO1P24HC4R1-BSIS 4GB

需要考虑的原因
A-DATA Technology AO1P24HC4R1-BSIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 74

左右 -106% 更低的延时
更快的写入速度，GB/s

8.2 2,201.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 36
读取速度，GB/s

4,178.4 14.9
写入速度，GB/s

2,201.1 8.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

508 2281

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

SK Hynix HYMP125S64CP8-S6 2GB

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Crucial Technology CT8G4DFD8213.M16FB 8GB

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Corsair CMT64GX4M4Z3600C18 16GB

Corsair CMT64GX4M4Z3600C18 16GB

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Crucial Technology CB8GS2400.C8D 8GB

Kingston ACR256X64D3S1333C9 2GB

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Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

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Corsair CMY8GX3M2A2666C10 4GB

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMK32GX4M2B3466C16 16GB

Corsair CMK32GX4M2B3466C16 16GB