Samsung M4 70T2864QZ3-CF7 1GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值
更快的写入速度，GB/s

2,201.1 13.8

测试中的平均数值

A-DATA Technology DDR4 3200 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 74

左右 -155% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

A-DATA Technology DDR4 3200 2OZ 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 29
读取速度，GB/s

4,178.4 17.2
写入速度，GB/s

2,201.1 13.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMK16GX4M1A2666C16 16GB

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Crucial Technology CT51264AC800.C16FC 4GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Corsair CMW16GX4M1Z3200C16 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Corsair CMK32GX4M4K4000C19 8GB

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Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Corsair CMK16GX4M2D3000C16 8GB

Corsair CMK16GX4M2D3000C16 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

G Skill Intl F4-3200C16-8GVRB 8GB

G Skill Intl F4-3200C16-8GVRB 8GB

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Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology BL16G32C16S4B.16FE 16GB

Crucial Technology BL16G32C16S4B.16FE 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Samsung M2S4G64CB8HD5N-CG 4GB

Samsung M2S4G64CB8HD5N-CG 4GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Kingston MSI24D4U7S8MB-8 8GB

Kingston MSI24D4U7S8MB-8 8GB