Samsung M4 70T2864QZ3-CF7 1GB vs Apacer Technology 78.CAGN7.4000C 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Apacer Technology 78.CAGN7.4000C 8GB

Apacer Technology 78.CAGN7.4000C 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值

Apacer Technology 78.CAGN7.4000C 8GB

需要考虑的原因
Apacer Technology 78.CAGN7.4000C 8GB

报告一个错误

低于PassMark测试中的延时，ns

65 74

左右 -14% 更低的延时
更快的写入速度，GB/s

8.2 2,201.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Apacer Technology 78.CAGN7.4000C 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 65
读取速度，GB/s

4,178.4 16.8
写入速度，GB/s

2,201.1 8.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

508 2042

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5673EH1-CF8 2GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

Kingston ACR512X64D3S13C9G 4GB

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G Skill Intl F4-4000C18-8GVK 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Golden Empire CL18-20-20 D4-3200 8GB

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Samsung M378B5773DH0-CH9 2GB

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Mushkin 99[2/7/4]205F 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Avant Technology W641GU42J9266NB 8GB

Avant Technology W641GU42J9266NB 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

Patriot Memory (PDP Systems) PSD48G240081 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3333C16-16GTZR 16GB

G Skill Intl F4-3333C16-16GTZR 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB