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Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMD64GX4M4C3200C16 16GB

Samsung M4 70T2864QZ3-CF7 1GB vs Corsair CMD64GX4M4C3200C16 16GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Corsair CMD64GX4M4C3200C16 16GB

Corsair CMD64GX4M4C3200C16 16GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 13.2
    测试中的平均数值
Corsair CMD64GX4M4C3200C16 16GB 需要考虑的原因
Corsair CMD64GX4M4C3200C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 74
    左右 -111% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMD64GX4M4C3200C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 35
  • 读取速度，GB/s
    4,178.4 left arrow 15.5
  • 写入速度，GB/s
    2,201.1 left arrow 13.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    508 left arrow 3183

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD64GX4M4C3200C16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston 9905678-173.A00G 8GB
Kingston 9905678-173.A00G 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4S24AM.M16FE 16GB
Crucial Technology CT16G4S24AM.M16FE 16GB
内存RAM
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
Mushkin 99[2/7/4]200F 8GB
Mushkin 99[2/7/4]200F 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK16GX4M2F4400C19 8GB
Corsair CMK16GX4M2F4400C19 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK16GX4M1Z3600C18 16GB
Corsair CMK16GX4M1Z3600C18 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMD32GX4M4B3333C16 8GB
Corsair CMD32GX4M4B3333C16 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CM4X8GF2400C16K4 8GB
Corsair CM4X8GF2400C16K4 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Maxsun MSD48G32Q3 8GB
Maxsun MSD48G32Q3 8GB
内存RAM