Samsung M4 70T2864QZ3-CF7 1GB vs Crucial Technology BLS8G4D240FSB.16FAR 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Crucial Technology BLS8G4D240FSB.16FAR 8GB

Crucial Technology BLS8G4D240FSB.16FAR 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.5

测试中的平均数值
更快的写入速度，GB/s

2,201.1 10.6

测试中的平均数值

Crucial Technology BLS8G4D240FSB.16FAR 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSB.16FAR 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 74

左右 -164% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology BLS8G4D240FSB.16FAR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 28
读取速度，GB/s

4,178.4 13.5
写入速度，GB/s

2,201.1 10.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

508 2652

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4266C16-8GTZR 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Corsair CMD128GX4M8B2800C14 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Essencore Limited KD4AGU880-32A160T 16GB

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G Skill Intl F4-3600C17-8GTZ 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43CB1-CRC 8GB

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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston 9965662-004.A00G 16GB

Kingston 9965662-004.A00G 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston 9905744-011.A00G 32GB

Kingston 9905744-011.A00G 32GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMW16GX4M2E3200C16 8GB

Corsair CMW16GX4M2E3200C16 8GB