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Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Samsung M4 70T2864QZ3-CF7 1GB vs Crucial Technology BLS8G4D32AESBK.M8FE 8GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 14.6
    测试中的平均数值
Crucial Technology BLS8G4D32AESBK.M8FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 74
    左右 -174% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 27
  • 读取速度，GB/s
    4,178.4 left arrow 18.1
  • 写入速度，GB/s
    2,201.1 left arrow 14.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    508 left arrow 3446

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 99U5713-003.A00G 4GB
Kingston 99U5713-003.A00G 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMD32GX4M4C3200C16 8GB
Corsair CMD32GX4M4C3200C16 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Mushkin 99[2/7/4]192F 4GB
Mushkin 99[2/7/4]192F 4GB
内存RAM
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
Kingston 99U5702-020.A00G 8GB
Kingston 99U5702-020.A00G 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMW64GX4M2E3200C16 32GB
Corsair CMW64GX4M2E3200C16 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M391A1G43DB0-CPB 8GB
Samsung M391A1G43DB0-CPB 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
V-Color Technology Inc. TL48G26S8KRRGB16 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Samsung M393A4K40CB2-CTD 32GB
Samsung M393A4K40CB2-CTD 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM