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Samsung M4 70T2864QZ3-CF7 1GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Samsung M4 70T2864QZ3-CF7 1GB vs Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 15.3
    测试中的平均数值
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 74
    左右 -164% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 28
  • 读取速度，GB/s
    4,178.4 left arrow 17.5
  • 写入速度，GB/s
    2,201.1 left arrow 15.3
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    508 left arrow 3673

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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