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Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Samsung M4 70T2864QZ3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 13.7
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 74
    左右 -185% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 26
  • 读取速度，GB/s
    4,178.4 left arrow 18.1
  • 写入速度，GB/s
    2,201.1 left arrow 13.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    508 left arrow 3061

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB RAM的比较

Corsair VS1GB800D2 1GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston KHX2400C15/16G 16GB
Kingston KHX2400C15/16G 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3200C15-16GTZKO 16GB
G Skill Intl F4-3200C15-16GTZKO 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
内存RAM
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2800C16-8GVG 8GB
G Skill Intl F4-2800C16-8GVG 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
内存RAM