Samsung M4 70T2864QZ3-CF7 1GB vs Kingston 9905625-036.A00G 16GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Kingston 9905625-036.A00G 16GB

Kingston 9905625-036.A00G 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.2

测试中的平均数值

Kingston 9905625-036.A00G 16GB

需要考虑的原因
Kingston 9905625-036.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 74

左右 -124% 更低的延时
更快的写入速度，GB/s

9.4 2,201.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905625-036.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 33
读取速度，GB/s

4,178.4 14.2
写入速度，GB/s

2,201.1 9.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 2494

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8213.C8FH1 8GB

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Samsung M391B5673EH1-CH9 2GB

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Samsung M471A5244CB0-CWE 4GB

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G Skill Intl F4-3000C16-8GTRS 8GB

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Kingston 99U5458-008.A00LF 4GB

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Corsair CMK64GX4M8X4000C19 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Samsung M378A1G44AB0-CWE 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905625-036.A00G 16GB

Kingston 9905625-036.A00G 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

Kingston KVR16N11/8-SP 8GB

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Kingston 9965589-037.D00G 8GB

Kingston 9965589-037.D00G 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB