Samsung M4 70T2864QZ3-CF7 1GB vs Kingston 9905744-011.A00G 32GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Kingston 9905744-011.A00G 32GB

Kingston 9905744-011.A00G 32GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.4

测试中的平均数值
更快的写入速度，GB/s

2,201.1 12.7

测试中的平均数值

Kingston 9905744-011.A00G 32GB

需要考虑的原因
Kingston 9905744-011.A00G 32GB

报告一个错误

低于PassMark测试中的延时，ns

41 74

左右 -80% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905744-011.A00G 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 41
读取速度，GB/s

4,178.4 14.4
写入速度，GB/s

2,201.1 12.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

508 2847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M4B3000C15 4GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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G Skill Intl F4-3000C15-4GRR 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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Corsair CML16GX3M2A1600C10 8GB

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Corsair CMR32GX4M4C3200C16 8GB

Corsair CMR32GX4M4C3200C16 8GB

Samsung M393B2G70BH0-CK0 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Corsair CMZ16GX3M2A1600C10 8GB

Corsair CMZ16GX3M2A1600C10 8GB

Corsair CMW64GX4M4C3466C16 16GB

Corsair CMW64GX4M4C3466C16 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston KHX2400C12D4/8GX 8GB

Kingston KHX2400C12D4/8GX 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMK64GX4M4A2133C13 16GB

Corsair CMK64GX4M4A2133C13 16GB