Samsung M4 70T2864QZ3-CF7 1GB vs Kingston KF3000C15D4/8GX 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Kingston KF3000C15D4/8GX 8GB

Kingston KF3000C15D4/8GX 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.7

测试中的平均数值
更快的写入速度，GB/s

2,201.1 13.9

测试中的平均数值

Kingston KF3000C15D4/8GX 8GB

需要考虑的原因
Kingston KF3000C15D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 74

左右 -131% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Kingston KF3000C15D4/8GX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 32
读取速度，GB/s

4,178.4 18.7
写入速度，GB/s

2,201.1 13.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

508 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ADF2G72AZ-2G6E1 16GB

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Samsung M378B5273CH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL16G32C16U4R.M16FE 16GB

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A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N

SK Hynix HMT351U6CFR8C-H9 4GB

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Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Kingston 9905625-011.A00G 8GB

Kingston 9905625-011.A00G 8GB