Samsung M4 70T2864QZ3-CF7 1GB vs Samsung M471A1G43EB1-CPB 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 11.6

测试中的平均数值

Samsung M471A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M471A1G43EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 74

左右 -64% 更低的延时
更快的写入速度，GB/s

8.5 2,201.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M471A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 45
读取速度，GB/s

4,178.4 11.6
写入速度，GB/s

2,201.1 8.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 2036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2864QZ3-CF7 1GB

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Kingston 9905403-447.A00LF 4GB

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Micron Technology 36ASF4G72PZ-2G1A1 32GB

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Samsung V-GeN D4S8GL26A8TL5 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

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Kingston 9905700-012.A00G 8GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB