Samsung M4 70T2953EZ3-CE6 1GB vs A-DATA Technology AO2P24HCST2-BTCS 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

A-DATA Technology AO2P24HCST2-BTCS 16GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

低于PassMark测试中的延时，ns

73 79

左右 8% 更低的延时
更快的读取速度，GB/s

3 14.5

测试中的平均数值

A-DATA Technology AO2P24HCST2-BTCS 16GB

需要考虑的原因
A-DATA Technology AO2P24HCST2-BTCS 16GB

报告一个错误

更快的写入速度，GB/s

8.6 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 79
读取速度，GB/s

3,510.5 14.5
写入速度，GB/s

1,423.3 8.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 1850

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology GD2.0918CT.001 4GB

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Samsung M471A5244CB0-CWE 4GB

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Crucial Technology CT16G4DFD824A.C16FE 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Corsair CMK8GX4M1A2400C14 8GB

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Kingston 9905403-038.A00LF 4GB

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Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3000C14-16GTZ 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

Samsung M471B5273CH0-CH9 4GB

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Micron Technology 36ASF2G72PZ-2G6E1 16GB

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Crucial Technology CT102464BF160B-16F 8GB

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Kingston LV32D4U2S8HD-8X 8GB

Kingston LV32D4U2S8HD-8X 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2666C15-8GVR 8GB

G Skill Intl F4-2666C15-8GVR 8GB