Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-2800C15-4GTZB 4GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

G Skill Intl F4-2800C15-4GTZB 4GB

G Skill Intl F4-2800C15-4GTZB 4GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-2800C15-4GTZB 4GB

需要考虑的原因
G Skill Intl F4-2800C15-4GTZB 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 38

左右 -90% 更低的延时
更快的读取速度，GB/s

19 15.5

测试中的平均数值
更快的写入速度，GB/s

13.7 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-2800C15-4GTZB 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 20
读取速度，GB/s

15.5 19.0
写入速度，GB/s

12.0 13.7
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2283 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-2800C15-4GTZB 4GB

G Skill Intl F4-2800C15-4GTZB 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 9905625-030.A00G 8GB

Kingston 9905625-030.A00G 8GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Crucial Technology BLT8G4D30BET4K.C8FD 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-4000C18-32GTZN 32GB

G Skill Intl F4-4000C18-32GTZN 32GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

V-Color Technology Inc. TC416G24D817 16GB

V-Color Technology Inc. TC416G24D817 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB