Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology BL8G32C16U4WL.M8FE 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 18.2

测试中的平均数值

Crucial Technology BL8G32C16U4WL.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4WL.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 -161% 更低的延时
更快的写入速度，GB/s

14.6 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 28
读取速度，GB/s

3,510.5 18.2
写入速度，GB/s

1,423.3 14.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 3384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMX8GX3M2A2000C9 4GB

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Tanbassh 8G 2666MHZ 8GB

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Kingston 99U5474-037.A00LF 4GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Micron Technology 36ASF2G72PZ-2G1B1 16GB

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A-DATA Technology DDR4 2400 16GB

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A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

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Team Group Inc. UD5-6400 16GB

Kingston 9905702-204.A00G 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

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AMD AE34G2139U2 4GB

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Kingston 9905625-097.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Mushkin MR[A/B]4U346GJJM8G 8GB

Mushkin MR[A/B]4U346GJJM8G 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMRX8GD3000C16R4D 8GB

Corsair CMRX8GD3000C16R4D 8GB