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Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB

Samsung M4 70T2953EZ3-CE6 1GB vs Micron Technology 36ADS2G72PZ-2G1A1 16GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    73 left arrow 94
    左右 22% 更低的延时
Micron Technology 36ADS2G72PZ-2G1A1 16GB 需要考虑的原因
Micron Technology 36ADS2G72PZ-2G1A1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    5.6 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.9 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 94
  • 读取速度，GB/s
    3,510.5 left arrow 5.6
  • 写入速度，GB/s
    1,423.3 left arrow 4.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    476 left arrow 1334

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905701-011.A00G 16GB
Kingston 9905701-011.A00G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
DSL Memory D4SH1G081SH26A-C 8GB
DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9932301-P01.A00G 4GB
Kingston 9932301-P01.A00G 4GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
Crucial Technology CT102464BD160B.M16 8GB
Crucial Technology CT102464BD160B.M16 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Golden Empire CL15-15-15 D4-3000 8GB
Golden Empire CL15-15-15 D4-3000 8GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Kingston KHX3466C16D4/8GX 8GB
Kingston KHX3466C16D4/8GX 8GB
内存RAM