Samsung M4 70T5663CZ3-CE6 2GB vs Apacer Technology 78.C1GS7.AUC0B 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值

Apacer Technology 78.C1GS7.AUC0B 8GB

需要考虑的原因
Apacer Technology 78.C1GS7.AUC0B 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 69

左右 -229% 更低的延时
更快的写入速度，GB/s

14.4 1,441.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Apacer Technology 78.C1GS7.AUC0B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 21
读取速度，GB/s

3,325.1 18.4
写入速度，GB/s

1,441.2 14.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

525 3305

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 9905713-035.A00G 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Mushkin 99[2/7/4]199[F/T] 8GB

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Mushkin MR[ABC]4U320GJJM8G 8GB

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Kingston 9965662-016.A00G 16GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

Corsair CM4X16GD3200C16K4E 16GB

Corsair CM4X16GD3200C16K4E 16GB

Samsung M4 70T2953EZ3-CE6 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMK32GX4M4C3000C16 8GB

Corsair CMK32GX4M4C3000C16 8GB