Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-2666C18-4GRS 4GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.9

测试中的平均数值

G Skill Intl F4-2666C18-4GRS 4GB

需要考虑的原因
G Skill Intl F4-2666C18-4GRS 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 69

左右 -123% 更低的延时
更快的写入速度，GB/s

11.4 1,441.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-2666C18-4GRS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 31
读取速度，GB/s

3,325.1 14.9
写入速度，GB/s

1,441.2 11.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

525 2330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C18-4GRS 4GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CM4B16G2L2666A18K2 16GB

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Patriot Memory (PDP Systems) 2800 C16 Series 8GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

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Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Hewlett-Packard 7EH68AA# 16GB

Hewlett-Packard 7EH68AA# 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMWB8G1L3200K16W4 8GB

Corsair CMWB8G1L3200K16W4 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Corsair CMW32GX4M4C3200C16 8GB

Corsair CMW32GX4M4C3200C16 8GB