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Samsung M4 70T5663CZ3-CE6 2GB
Kingston K1CXP8-MIE 16GB

Samsung M4 70T5663CZ3-CE6 2GB vs Kingston K1CXP8-MIE 16GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15
    测试中的平均数值
Kingston K1CXP8-MIE 16GB 需要考虑的原因
Kingston K1CXP8-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 69
    左右 -64% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Kingston K1CXP8-MIE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 42
  • 读取速度，GB/s
    3,325.1 left arrow 15.0
  • 写入速度，GB/s
    1,441.2 left arrow 11.8
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2790

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Kingston K1CXP8-MIE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
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Kingston K1CXP8-MIE 16GB
Kingston K1CXP8-MIE 16GB
内存RAM
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SK Hynix HMT451S6BFR8A-PB 4GB
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内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
Kingston 9905403-447.A00LF 4GB
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3333C16-16GVR 16GB
G Skill Intl F4-3333C16-16GVR 16GB
内存RAM
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