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Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 16G2666CL19 16GB
比较
Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 16G2666CL19 16GB
总分
Samsung M4 70T5663CZ3-CE6 2GB
总分
Micron Technology 16G2666CL19 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
15.4
测试中的平均数值
需要考虑的原因
Micron Technology 16G2666CL19 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
69
左右 -188% 更低的延时
更快的写入速度,GB/s
8.2
1,441.2
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 16G2666CL19 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
69
24
读取速度,GB/s
3,325.1
15.4
写入速度,GB/s
1,441.2
8.2
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
525
2438
Samsung M4 70T5663CZ3-CE6 2GB RAM的比较
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Micron Technology 16G2666CL19 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX1600C9S3L/4G 4GB
Kingston 9905743-045.A00G 16GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KHX2666C15D4/4G 4GB
Kingston 99U5584-001.A00LF 4GB
PUSKILL PJ16TFK1GM8 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston KHYXPX-MID 8GB
Kingston KF3200C16D4/16GX 16GB
Kingston KHX2400C15/8G 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK128GX4M8X3800C19 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 16G2666CL19 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-4000C18-32GTZR 32GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-3000C15-8GTZR 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M471A2K43EB1-CTD 16GB
Corsair CML8GX3M2A1866C9 4GB
Samsung SH5724G4UNC26P2-SC 32GB
报告一个错误
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Bug description
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