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Samsung M4 70T5663CZ3-CE6 2GB
Samsung M471A5244CB0-CWE 4GB

Samsung M4 70T5663CZ3-CE6 2GB vs Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.5
    测试中的平均数值
Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 69
    左右 -82% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M471A5244CB0-CWE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 38
  • 读取速度，GB/s
    3,325.1 left arrow 15.5
  • 写入速度，GB/s
    1,441.2 left arrow 12.0
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2283

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Hewlett-Packard 7EH64AA# 8GB
Hewlett-Packard 7EH64AA# 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3300C16-16GTZKW 16GB
G Skill Intl F4-3300C16-16GTZKW 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3200C16-8GVGB 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Patriot Memory (PDP Systems) 160C0 V3 Series 8GB
Patriot Memory (PDP Systems) 160C0 V3 Series 8GB
Corsair CMZ16GX3M2A1600C9 8GB
Corsair CMZ16GX3M2A1600C9 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
内存RAM
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMK16GX4M2C3200C16 8GB
Corsair CMK16GX4M2C3200C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905702-027.A00G 8GB
Kingston 9905702-027.A00G 8GB
内存RAM