Samsung M4 70T5663QZ3-CE6 2GB vs Crucial Technology CT8G4SFS824A.C8FBR1 8GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.3

测试中的平均数值

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FBR1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 68

左右 -127% 更低的延时
更快的写入速度，GB/s

10.0 1,702.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 30
读取速度，GB/s

3,886.6 13.3
写入速度，GB/s

1,702.6 10.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

654 2306

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Corsair CMSX16GX4M1A2400C16 16GB

Corsair CMSX16GX4M1A2400C16 16GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

SK Hynix HMA82GU6DJR8N-VK 16GB

SK Hynix HMA82GU6DJR8N-VK 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston KP6FH5-MIE 32GB

Kingston KP6FH5-MIE 32GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

AMD R7416G2133U2S 16GB

AMD R7416G2133U2S 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Apacer Technology 78.CAGNT.4050B 8GB

Apacer Technology 78.CAGNT.4050B 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB