Samsung M393B5270CH0-CH9 4GB vs Crucial Technology CT8G4DFD8213.16FA11 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Crucial Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 -62% 更低的延时
更快的读取速度，GB/s

15.5 10.6

测试中的平均数值
更快的写入速度，GB/s

11.3 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 26
读取速度，GB/s

10.6 15.5
写入速度，GB/s

9.0 11.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 2780

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Kingston KTD3KX-MIB 8GB

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Corsair CM2X1024-8500C5D 1GB

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Kingston KHX3000C16D4/32GX 32GB

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Mushkin 991586 2GB

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Crucial Technology CT16G4DFD8213.C16FH1 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Corsair CMW64GX4M2E3200C16 32GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK16GX4M2A2400C16 8GB

Corsair CMK16GX4M2A2400C16 8GB