Samsung M4 70T5663QZ3-CE6 2GB vs Samsung M4 70T2864DZ3-CE6 1GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Samsung M4 70T2864DZ3-CE6 1GB

Samsung M4 70T2864DZ3-CE6 1GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

低于PassMark测试中的延时，ns

68 69

左右 1% 更低的延时
更快的读取速度，GB/s

3 3

测试中的平均数值
更快的写入速度，GB/s

1,702.6 1,382.6

测试中的平均数值

Samsung M4 70T2864DZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864DZ3-CE6 1GB

报告一个错误

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T2864DZ3-CE6 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

68 69
读取速度，GB/s

3,886.6 3,036.7
写入速度，GB/s

1,702.6 1,382.6
内存带宽，mbps

5300 5300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

654 450

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T2864DZ3-CE6 1GB

Samsung M4 70T2864DZ3-CE6 1GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3300C16-8GTZ 8GB

G Skill Intl F4-3300C16-8GTZ 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965639-002.A01G 8GB

Kingston 9965639-002.A01G 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Mushkin MR[A/B]4U320LLLM8G 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-4266C17-8GTZR 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB