Samsung M4 70T5663QZ3-CE6 2GB vs Wilk Elektronik S.A. GR2666D464L19/16G 16GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 68

左右 -134% 更低的延时
更快的写入速度，GB/s

11.5 1,702.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 29
读取速度，GB/s

3,886.6 16.1
写入速度，GB/s

1,702.6 11.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

654 3098

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Avant Technology W641GU42J7240NB 8GB

Avant Technology W641GU42J7240NB 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3733C17-4GVK 4GB

G Skill Intl F4-3733C17-4GVK 4GB