Samsung M471A1G44AB0-CWE 8GB vs Avexir Technologies Corporation T 4GB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

总分

Avexir Technologies Corporation T 4GB

Avexir Technologies Corporation T 4GB

差异规格评论

差异

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Avexir Technologies Corporation T 4GB

需要考虑的原因
Avexir Technologies Corporation T 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 50

左右 -138% 更低的延时
更快的读取速度，GB/s

18 15.3

测试中的平均数值
更快的写入速度，GB/s

13.4 10.9

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1G44AB0-CWE 8GB

Avexir Technologies Corporation T 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

50 21
读取速度，GB/s

15.3 18.0
写入速度，GB/s

10.9 13.4
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2512 2801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3733C17-16GTZKK 16GB

Corsair CMZ16GX3M2A2400C10 8GB

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SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

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Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Super Talent STT-WB160CL0901 2GB

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