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Samsung M471A2K43EB1-CWE 16GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB

Samsung M471A2K43EB1-CWE 16GB vs A-DATA Technology AO1P21FC8T1-BSKS 8GB

总分
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

总分
star star star star star
A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

差异 规格 评论

差异

Samsung M471A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
A-DATA Technology AO1P21FC8T1-BSKS 8GB 需要考虑的原因
A-DATA Technology AO1P21FC8T1-BSKS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 55
    左右 -53% 更低的延时

规格

完整的技术规格清单
Samsung M471A2K43EB1-CWE 16GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    55 left arrow 36
  • 读取速度，GB/s
    15.8 left arrow 13.6
  • 写入速度，GB/s
    13.8 left arrow 8.7
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2701 left arrow 2231

Samsung M471A2K43EB1-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3733C17-4GTZ 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Golden Empire CL16-18-18 D4-3000 16GB
Golden Empire CL16-18-18 D4-3000 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston LV36D4U1S8HD-8XR 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J642GU42J9266NF 16GB
Avant Technology J642GU42J9266NF 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Corsair CMK16GX4M4A2133C15 4GB
Corsair CMK16GX4M4A2133C15 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kingston K000MD44U 4GB
Kingston K000MD44U 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
内存RAM