Samsung M471A5143SB1-CRC 4GB vs Crucial Technology BLS8G4D26BFSEK.8FD 8GB

总分

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

总分

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

差异规格评论

差异

Samsung M471A5143SB1-CRC 4GB

需要考虑的原因
Samsung M471A5143SB1-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 32

左右 25% 更低的延时

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSEK.8FD 8GB

报告一个错误

更快的读取速度，GB/s

16.6 14.9

测试中的平均数值
更快的写入速度，GB/s

13.8 10.6

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Samsung M471A5143SB1-CRC 4GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 32
读取速度，GB/s

14.9 16.6
写入速度，GB/s

10.6 13.8
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2196 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Corsair CMK32GX4M2L3000C15 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

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Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

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Kingston 9905474-043.A00LF 4GB

Kingston 9905474-043.A00LF 4GB