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Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-2400C15-4GVR 4GB

Samsung M471A5143SB1-CRC 4GB vs G Skill Intl F4-2400C15-4GVR 4GB

总分
star star star star star
Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

总分
star star star star star
G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB

差异 规格 评论

差异

Samsung M471A5143SB1-CRC 4GB 需要考虑的原因
Samsung M471A5143SB1-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 33
    左右 27% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
G Skill Intl F4-2400C15-4GVR 4GB 需要考虑的原因
G Skill Intl F4-2400C15-4GVR 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 10.6
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-2400C15-4GVR 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 33
  • 读取速度，GB/s
    14.9 left arrow 16.1
  • 写入速度，GB/s
    10.6 left arrow 11.7
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 2702

Samsung M471A5143SB1-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C15-4GVR 4GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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