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Samsung M471A5244CB0-CTD 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB

Samsung M471A5244CB0-CTD 4GB vs Team Group Inc. 76TT16NUSL2R8-4G 4GB

总分
star star star star star
Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

总分
star star star star star
Team Group Inc. 76TT16NUSL2R8-4G 4GB

Team Group Inc. 76TT16NUSL2R8-4G 4GB

差异 规格 评论

差异

Samsung M471A5244CB0-CTD 4GB 需要考虑的原因
Samsung M471A5244CB0-CTD 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 4.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66% 更高的带宽
Team Group Inc. 76TT16NUSL2R8-4G 4GB 需要考虑的原因
Team Group Inc. 76TT16NUSL2R8-4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 39
    左右 -22% 更低的延时

规格

完整的技术规格清单
Samsung M471A5244CB0-CTD 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时，ns
    39 left arrow 32
  • 读取速度，GB/s
    15.5 left arrow 9.2
  • 写入速度，GB/s
    11.5 left arrow 4.6
  • 内存带宽，mbps
    21300 left arrow 12800
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2264 left arrow 1265

Samsung M471A5244CB0-CTD 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB

Team Group Inc. 76TT16NUSL2R8-4G 4GB RAM的比较

Kingston 99U5403-036.A00G 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB
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