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Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
比较
Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-3600C14-8GTZN 8GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
G Skill Intl F4-3600C14-8GTZN 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C14-8GTZN 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
38
左右 -23% 更低的延时
更快的读取速度,GB/s
19.1
15.5
测试中的平均数值
更快的写入速度,GB/s
13.7
12.0
测试中的平均数值
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
31
读取速度,GB/s
15.5
19.1
写入速度,GB/s
12.0
13.7
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2283
3091
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C14-8GTZN 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A2G43AB3-CWE 16GB
Kingston 9965525-140.A00LF 8GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3200C14-8GTZR 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3333C16-8GTZ 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMSX16GX4M2A3000C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK16GX4M4A2400C14 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9905630-030.A00G 16GB
Corsair CMSO4GX3M1C1600C11 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology J641GU42J5213N0 8GB
Samsung M471B5273CH0-CH9 4GB
Apacer Technology 78.CAGR9.40C0B 8GB
Samsung M393B1K70CH0-CH9 8GB
Asgard VML41UG-MIC1U22T1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-4400C18-8GTRS 8GB
报告一个错误
×
Bug description
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