Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-4133C19-8GTZC 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-4133C19-8GTZC 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZC 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 -65% 更低的延时
更快的读取速度，GB/s

19.3 15.5

测试中的平均数值
更快的写入速度，GB/s

16.7 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-4133C19-8GTZC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 23
读取速度，GB/s

15.5 19.3
写入速度，GB/s

12.0 16.7
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2283 4015

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BF160BJ.M8F 4GB

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Samsung M471B5173EB0-YK0 4GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2666C18-32GRS 32GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB