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Samsung M471A5244CB0-CWE 4GB
INTENSO 5641162 8GB

Samsung M471A5244CB0-CWE 4GB vs INTENSO 5641162 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
INTENSO 5641162 8GB

INTENSO 5641162 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更快的写入速度，GB/s
    12.0 left arrow 11.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
INTENSO 5641162 8GB 需要考虑的原因
INTENSO 5641162 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 38
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 15.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
INTENSO 5641162 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 23
  • 读取速度，GB/s
    15.5 left arrow 16.2
  • 写入速度，GB/s
    12.0 left arrow 11.7
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 2799

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

INTENSO 5641162 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-4000C18-16GTRS 16GB
G Skill Intl F4-4000C18-16GTRS 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
SK Hynix GKE800SO102408-2400 8GB
SK Hynix GKE800SO102408-2400 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M474A1G43EB1-CRC 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
内存RAM