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Samsung M471B1G73BH0-YK0 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Samsung M471B1G73BH0-YK0 8GB vs Crucial Technology BLS8G4D26BFSE.16FD2 8GB

总分
star star star star star
Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB

差异 规格 评论

差异

Samsung M471B1G73BH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73BH0-YK0 8GB
报告一个错误
Crucial Technology BLS8G4D26BFSE.16FD2 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 43
    左右 -95% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 7.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73BH0-YK0 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 22
  • 读取速度，GB/s
    12.1 left arrow 16.5
  • 写入速度，GB/s
    7.6 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2034 left arrow 2809

Samsung M471B1G73BH0-YK0 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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