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Samsung M471B1G73BH0-YK0 8GB
SK Hynix HMT41GS6BFR8A-RD 8GB

Samsung M471B1G73BH0-YK0 8GB vs SK Hynix HMT41GS6BFR8A-RD 8GB

总分
star star star star star
Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

总分
star star star star star
SK Hynix HMT41GS6BFR8A-RD 8GB

SK Hynix HMT41GS6BFR8A-RD 8GB

差异 规格 评论

差异

Samsung M471B1G73BH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73BH0-YK0 8GB
报告一个错误
SK Hynix HMT41GS6BFR8A-RD 8GB 需要考虑的原因
SK Hynix HMT41GS6BFR8A-RD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 43
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 7.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    14900 left arrow 12800
    左右 1.16 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73BH0-YK0 8GB
SK Hynix HMT41GS6BFR8A-RD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 38
  • 读取速度，GB/s
    12.1 left arrow 13.8
  • 写入速度，GB/s
    7.6 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 14900
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-10-9-28 / 1866 MHz
  • 排名PassMark (越多越好)
    2034 left arrow 2519

Samsung M471B1G73BH0-YK0 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB

SK Hynix HMT41GS6BFR8A-RD 8GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Samsung M471B1G73BH0-YK0 8GB
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SK Hynix HMT41GS6BFR8A-RD 8GB
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内存RAM
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内存RAM
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内存RAM
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