Samsung M471B1G73DB0-YK0 8GB vs Patriot Memory (PDP Systems) 3200 C18 Series 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3200 C18 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 45

左右 -41% 更低的延时
更快的读取速度，GB/s

19.5 11.9

测试中的平均数值
更快的写入速度，GB/s

14.9 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 32
读取速度，GB/s

11.9 19.5
写入速度，GB/s

8.1 14.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2077 3430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Corsair CMSX32GX4M2A2933C19 16GB

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Samsung M391B5673FH0-CH9 2GB

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Patriot Memory (PDP Systems) 3400 C16 Series 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-3200C14-16GTRS 16GB

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Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3466C16-16GTZR 16GB

G Skill Intl F4-3466C16-16GTZR 16GB