Samsung M471B1G73EB0-YK0 8GB vs AMD R748G2400S2S 8GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

46 135

左右 66% 更低的延时

AMD R748G2400S2S 8GB

需要考虑的原因
AMD R748G2400S2S 8GB

报告一个错误

更快的读取速度，GB/s

15.2 12.2

测试中的平均数值
更快的写入速度，GB/s

8.2 7.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

AMD R748G2400S2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 135
读取速度，GB/s

12.2 15.2
写入速度，GB/s

7.9 8.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2072 1359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD32GX4M2A2666C15 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston XK2M26-MIE 16GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

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Apacer Technology 78.01G86.9H50C 1GB

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Samsung M471A1K43BB1-CTD 8GB

Samsung M471A1K43BB1-CTD 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Avant Technology J644GU44J2320NF 32GB

Avant Technology J644GU44J2320NF 32GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

DSL Memory D4SS12082SH21A-A 8GB

DSL Memory D4SS12082SH21A-A 8GB