Samsung M471B1G73EB0-YK0 8GB vs DSL Memory D4SS1G081SH24A-A 8GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

DSL Memory D4SS1G081SH24A-A 8GB

DSL Memory D4SS1G081SH24A-A 8GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

更快的写入速度，GB/s

7.9 7.0

测试中的平均数值

DSL Memory D4SS1G081SH24A-A 8GB

需要考虑的原因
DSL Memory D4SS1G081SH24A-A 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的读取速度，GB/s

14.6 12.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

DSL Memory D4SS1G081SH24A-A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

12.2 14.6
写入速度，GB/s

7.9 7.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2072 2313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX8GX3M2A2000C9 4GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

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Kingston 2GB-DDR2 800Mhz 2GB

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G Skill Intl F4-3466C16-16GTZ 16GB

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Samsung M3 78T5663EH3-CF7 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB