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Samsung M471B1G73QH0-YK0 8GB
Corsair CMD16GX4M4B3333C16 4GB

Samsung M471B1G73QH0-YK0 8GB vs Corsair CMD16GX4M4B3333C16 4GB

总分
star star star star star
Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分
star star star star star
Corsair CMD16GX4M4B3333C16 4GB

Corsair CMD16GX4M4B3333C16 4GB

差异 规格 评论

差异

Samsung M471B1G73QH0-YK0 8GB 需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB
报告一个错误
Corsair CMD16GX4M4B3333C16 4GB 需要考虑的原因
Corsair CMD16GX4M4B3333C16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 47
    左右 -161% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73QH0-YK0 8GB
Corsair CMD16GX4M4B3333C16 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 18
  • 读取速度，GB/s
    11.8 left arrow 19.4
  • 写入速度，GB/s
    8.0 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2061 left arrow 3063

Samsung M471B1G73QH0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.M16 8GB

Corsair CMD16GX4M4B3333C16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMD16GX4M4B3333C16 4GB
Corsair CMD16GX4M4B3333C16 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-2400C15-4GNT 4GB
G Skill Intl F4-2400C15-4GNT 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston ACR26D4U9S1KA-4 4GB
Kingston ACR26D4U9S1KA-4 4GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMSX16GX4M2A2666C18 8GB
Corsair CMSX16GX4M2A2666C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM