Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology BLT8G4D26AFTA.16FAD 8GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

需要考虑的原因
Crucial Technology BLT8G4D26AFTA.16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 47

左右 -27% 更低的延时
更快的读取速度，GB/s

15.5 11.8

测试中的平均数值
更快的写入速度，GB/s

12.5 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 37
读取速度，GB/s

11.8 15.5
写入速度，GB/s

8.0 12.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2061 2813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW16GX4M2C3466C16 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 99U5474-022.A00LF 2GB

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Kingston KHX3200C16D4/32GX 32GB

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Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Apacer Technology 78.D2GFH.4030B 16GB

Apacer Technology 78.D2GFH.4030B 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

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AMD R748G2400U2S 8GB

AMD R748G2400U2S 8GB

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PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB