Samsung M471B1G73QH0-YK0 8GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 -68% 更低的延时
更快的读取速度，GB/s

12.2 11.8

测试中的平均数值
更快的写入速度，GB/s

9.3 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 28
读取速度，GB/s

11.8 12.2
写入速度，GB/s

8.0 9.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2061 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Kingston 9965600-012.A02G 16GB

Kingston 9965600-012.A02G 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMR32GX4M4C3333C16 8GB

Corsair CMR32GX4M4C3333C16 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston 9905668-001.A00G 8GB

Kingston 9905668-001.A00G 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kllisre 99P5428-002.A00LF 8GB

Kllisre 99P5428-002.A00LF 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMD32GX4M2C3466C16W 16GB

Corsair CMD32GX4M2C3466C16W 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9965589-031.D01G 2GB

Kingston 9965589-031.D01G 2GB