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Samsung M471B5173DB0-YK0 4GB
Corsair CMD32GX4M2B3466C16 16GB
比较
Samsung M471B5173DB0-YK0 4GB vs Corsair CMD32GX4M2B3466C16 16GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Corsair CMD32GX4M2B3466C16 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
需要考虑的原因
Corsair CMD32GX4M2B3466C16 16GB
报告一个错误
低于PassMark测试中的延时,ns
34
45
左右 -32% 更低的延时
更快的读取速度,GB/s
16.2
12
测试中的平均数值
更快的写入速度,GB/s
12.0
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Corsair CMD32GX4M2B3466C16 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
34
读取速度,GB/s
12.0
16.2
写入速度,GB/s
7.8
12.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1939
2938
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Corsair CMD32GX4M2B3466C16 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173DB0-YK0 4GB
Corsair CMD32GX4M2B3466C16 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
InnoDisk Corporation 16GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX3600C18D4/32GX 32GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK16GX4M4B3733C17 4GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
Kingston 9905702-010.A00G 8GB
Corsair CMW32GX4M4K4000C19 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW64GX4M2D3000C16 32GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
报告一个错误
×
Bug description
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