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Samsung M471B5173DB0-YK0 4GB
Kingston KHX2400C15S4/16G 16GB
比较
Samsung M471B5173DB0-YK0 4GB vs Kingston KHX2400C15S4/16G 16GB
总分
Samsung M471B5173DB0-YK0 4GB
总分
Kingston KHX2400C15S4/16G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
需要考虑的原因
Kingston KHX2400C15S4/16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
45
左右 -41% 更低的延时
更快的读取速度,GB/s
16.6
12
测试中的平均数值
更快的写入速度,GB/s
13.4
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Kingston KHX2400C15S4/16G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
32
读取速度,GB/s
12.0
16.6
写入速度,GB/s
7.8
13.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1939
3171
Samsung M471B5173DB0-YK0 4GB RAM的比较
Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Kingston KHX2400C15S4/16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5403-036.A00G 4GB
Kingston HP26D4U6D8ME-16X 16GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3000C14-16GVR 16GB
Team Group Inc. Vulcan-1600 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905670-012.A00G 8GB
Kingston 99P5471-033.A00LF 8GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
Samsung M393B2G70BH0-CK0 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2133C15-8GNS 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK8GX4M2A2666C16 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD64GX4M4B3000C15 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Golden Empire CL15-17-17 D4-3000 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 9JSF25672AZ-1G6M1 2GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Samsung M395T5160QZ4-CE66 2GB
V-GEN D4S8GL32A8TS 8GB
Super Talent STT-WB160CL0901 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
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