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Samsung M471B5173DB0-YK0 4GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Samsung M471B5173DB0-YK0 4GB vs Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

总分
star star star star star
Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分
star star star star star
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

差异 规格 评论

差异

Samsung M471B5173DB0-YK0 4GB 需要考虑的原因
Samsung M471B5173DB0-YK0 4GB
报告一个错误
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 45
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173DB0-YK0 4GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 29
  • 读取速度，GB/s
    12.0 left arrow 18.8
  • 写入速度，GB/s
    7.8 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1939 left arrow 3675

Samsung M471B5173DB0-YK0 4GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
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Mushkin 991586 2GB
Mushkin 991586 2GB
Kingston 9905713-019.A00G 4GB
Kingston 9905713-019.A00G 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston CBD26D4S9D8ME-16 16GB
Kingston CBD26D4S9D8ME-16 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Corsair CMK16GX4M2K4133C19 8GB
Corsair CMK16GX4M2K4133C19 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3200C14-32GTRG 32GB
G Skill Intl F4-3200C14-32GTRG 32GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMK16GX4M2K4400C19 8GB
Corsair CMK16GX4M2K4400C19 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
AMD R748G2133U2S-UO 8GB
AMD R748G2133U2S-UO 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMK16GX4M2A2666C18 8GB
Corsair CMK16GX4M2A2666C18 8GB
内存RAM