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Samsung M471B5173EB0-YK0 4GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB

Samsung M471B5173EB0-YK0 4GB vs Crucial Technology BL16G30C15U4WL.M16FE 16GB

总分
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分
star star star star star
Crucial Technology BL16G30C15U4WL.M16FE 16GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB

差异 规格 评论

差异

Samsung M471B5173EB0-YK0 4GB 需要考虑的原因
Samsung M471B5173EB0-YK0 4GB
报告一个错误
Crucial Technology BL16G30C15U4WL.M16FE 16GB 需要考虑的原因
Crucial Technology BL16G30C15U4WL.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 44
    左右 -63% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173EB0-YK0 4GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 27
  • 读取速度，GB/s
    13.0 left arrow 18.5
  • 写入速度，GB/s
    8.2 left arrow 15.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2069 left arrow 3731

Samsung M471B5173EB0-YK0 4GB RAM的比较

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology BL16G30C15U4WL.M16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
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内存RAM
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
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Kingston 9965657-011.A00G 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
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G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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Corsair CMSX16GX4M2A3000C16 8GB
内存RAM