Samsung M471B5173EB0-YK0 4GB vs Crucial Technology CT8G4DFS8213.C8FAD1 8GB

总分

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

差异规格评论

差异

Samsung M471B5173EB0-YK0 4GB

需要考虑的原因
Samsung M471B5173EB0-YK0 4GB

报告一个错误

更快的写入速度，GB/s

8.2 8.0

测试中的平均数值

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FAD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 44

左右 -76% 更低的延时
更快的读取速度，GB/s

13.7 13

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173EB0-YK0 4GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 25
读取速度，GB/s

13.0 13.7
写入速度，GB/s

8.2 8.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2069 2290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Avant Technology J642GU42J7240N2 16GB

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Unifosa Corporation HU564404EP0200 4GB

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Corsair CMK16GX4M1A2400C14 16GB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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G Skill Intl F4-2666C18-8GRS 8GB

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Samsung M471B5173EB0-YK0 4GB

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Crucial Technology CT8G4DFS8213.C8FAD1 8GB

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Golden Empire CL18-20-20 D4-3000 8GB

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Apacer Technology 78.C1GS7.AUC0B 8GB

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Kingston 99U5469-045.A00LF 4GB

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Nanya Technology NT8GA64D88AX3S-HR 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB